|
|
|
National Stock Number:
5961-00-882-4902
Federal Supply Class:
5961
National Item Identification Number:
008824902
Description:
SEMICONDUCTOR DEVICES,UNITIZED
Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.
|
Manufacturer Information:
| 2N2910 | 03508 | GENERAL ELECTRIC CO SEMI-CONDUCTOR PRODUCTS DEPT | | 2N2910 | 4U751 | ADVANCED SEMICONDUCTOR,INC. | | 2N2910 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION | | RELEASE 4446 | 80131 | ELECTRONIC INDUSTRIES ASSOCIATION |
|
Techincal Specification:
| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR | | CURRENT RATING PER CHARACTERISTIC | 1.00 MILLIAMPERES MAXIMUM EMITTER CURRENT, DC ALL TRANSISTOR | | FEATURES PROVIDED | HERMETICALLY SEALED CASE | | JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-77 | | OVERALL DIAMETER | 0.370 INCHES MAXIMUM | | OVERALL LENGTH | 0.210 INCHES MAXIMUM | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION | | MOUNTING METHOD | TERMINAL | | SPECIAL FEATURES | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN | | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM COLLECTOR POWER DISSIPATION ALL TRANSISTOR | | PRECIOUS MATERIAL AND LOCATION | TERMINAL SURFACES GOLD | | PRECIOUS MATERIAL | GOLD | | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 25.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 7.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN ALL TRANSISTOR | | TERMINAL CIRCLE DIAMETER | 0.200 INCHES NOMINAL | | TERMINAL LENGTH | 0.500 INCHES MINIMUM | | TERMINAL TYPE AND QUANTITY | 6 UNINSULATED WIRE LEAD | | TRANSFER RATIO | 50.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER ALL TRANSISTOR |
|
|