SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND |
| 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN |
CURRENT RATING PER CHARACTERISTIC | 2.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS |
POWER RATING PER CHARACTERISTIC | 8.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS |
INCLOSURE MATERIAL | GLASS |
TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 51.050 MILLIMETERS MAXIMUM |
MOUNTING METHOD | TERMINAL |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | -55.0 DEG CELSIUS CASE AND |
| 175.0 DEG CELSIUS CASE |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | T0-39 |
MOUNTING FACILITY QUANTITY | 4 |
TERMINAL LENGTH | 6.600 MILLIMETERS MAXIMUM |
TERMINAL CIRCLE DIAMETER | 9.390 MILLIMETERS MAXIMUM |
OVERALL DIAMETER | 0.315 INCHES MINIMUM AND |
| 0.335 INCHES MAXIMUM |
SPECIAL FEATURES | LOW FREQUENCY POWER SILICON PNP BJT |