SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND |
| 30.0 MAXIMUM GATE TO SOURCE VOLTAGE AND |
| 30.0 MAXIMUM DRAIN TO GATE VOLTAGE |
POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION |
INCLOSURE MATERIAL | METAL |
TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.170 INCHES MINIMUM AND |
| 0.210 INCHES MAXIMUM |
MOUNTING METHOD | TERMINAL |
INTERNAL CONFIGURATION | FIELD EFFECT |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS JUNCTION |
TERMINAL LENGTH | 0.500 INCHES MINIMUM |
OVERALL DIAMETER | 0.209 INCHES MINIMUM AND |
| 0.230 INCHES MAXIMUM |
TEST DATA DOCUMENT | 94117-209068 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |