SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 55.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND |
| 30.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND |
| 3.5 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
CURRENT RATING PER CHARACTERISTIC | 250.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
POWER RATING PER CHARACTERISTIC | 5.0 WATTS MAXIMUM TOTAL POWER DISSIPATION |
INCLOSURE MATERIAL | CERAMIC AND |
| METAL |
TERMINAL TYPE AND QUANTITY | 4 RIBBON |
OVERALL LENGTH | 0.170 INCHES NOMINAL |
MOUNTING METHOD | THREADED STUD |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
MOUNTING FACILITY QUANTITY | 1 |
THREAD SERIES DESIGNATOR | UNC |
NOMINAL THREAD SIZE | 0.164 INCHES |
OVERALL DIAMETER | 0.320 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
TEST DATA DOCUMENT | 13499-352-1059 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
PRECIOUS MATERIAL | GOLD |
PRECIOUS MATERIAL AND LOCATION | CHIP METALLIZATION AND INTERNAL WIRES GOLD |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |