SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 140.0 MAXIMUM COLLECTOR TO BASE VOLTAGE, DC AND |
| 120.0 MAXIMUM COLLECTOR-TO-EMITTER, SUBSTAINING VOLTAGE, BASE SHORT-CIRCUITEDTO EMITTER AND |
| 8.0 MAXIMUM EMITTER TO BASE VOLTAGE, DC |
CURRENT RATING PER CHARACTERISTIC | 2.00 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND |
| 0.50 AMPERES MAXIMUM BASE CURRENT, DC |
POWER RATING PER CHARACTERISTIC | 4.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
INCLOSURE MATERIAL | METAL |
TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.240 INCHES MINIMUM AND |
| 0.260 INCHES MAXIMUM |
MOUNTING METHOD | TERMINAL |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-5 |
TERMINAL LENGTH | 0.500 INCHES MINIMUM |
OVERALL DIAMETER | 0.335 INCHES MINIMUM AND |
| 0.370 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
TEST DATA DOCUMENT | 13499-352-8501 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: NPN |