| COMPONENT NAME AND QUANTITY | 6 SEMICONDUCTOR DEVICE DIODE |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 42.0 MAXIMUM REVERSE BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR DEVICE DIODE |
| POWER RATING PER CHARACTERISTIC | 2.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION ALL SEMICONDUCTOR DEVICE DIODE |
| INCLOSURE MATERIAL | CERAMIC ALL SEMICONDUCTOR DEVICE DIODE |
| MOUNTING METHOD | TERMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| TERMINAL TYPE AND QUANTITY | 2 CONNECTOR, COAXIAL ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL LENGTH | 0.215 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| OVERALL DIAMETER | 0.120 INCHES NOMINAL ALL SEMICONDUCTOR DEVICE DIODE |
| COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| FUNCTION FOR WHICH DESIGNED | VARACTOR DIODE |
| FIELD FORCE EFFECT TYPE | ELECTROSTATIC CHARGE |
| TEST DATA DOCUMENT | 13499-922-6104 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |