| COMPONENT NAME AND QUANTITY | 2 TRANSISTOR |
| SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR |
| INTERNAL CONFIGURATION | FIELD EFFECT ALL TRANSISTOR |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 30.0 MAXIMUM BREAKDOWN VOLTAGE, GATE-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE AND |
| 6.0 MAXIMUM GATE TO SOURCE CUTOFF VOLTAGE ALL TRANSISTOR |
| CURRENT RATING PER CHARACTERISTIC | 15.00 MILLIAMPERES MAXIMUM ZERO-GATE-VOLTAGE DRAIN CURRENT ALL TRANSISTOR |
| POWER RATING PER CHARACTERISTIC | 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR |
| INCLOSURE MATERIAL | METAL ALL TRANSISTOR |
| MOUNTING METHOD | TERMINAL ALL TRANSISTOR |
| TERMINAL LENGTH | 0.500 INCHES MINIMUM ALL TRANSISTOR |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD ALL TRANSISTOR |
| OVERALL LENGTH | 0.175 INCHES MINIMUM AND |
| 0.205 INCHES MAXIMUM ALL TRANSISTOR |
| OVERALL HEIGHT | 0.170 INCHES MINIMUM AND |
| 0.210 INCHES MAXIMUM ALL TRANSISTOR |
| OVERALL WIDTH | 0.125 INCHES MINIMUM AND |
| 0.165 INCHES MAXIMUM ALL TRANSISTOR |
| COMPONENT FUNCTION RELATIONSHIP | MATCHED |
| FEATURES PROVIDED | HERMETICALLY SEALED CASE |