5961-01-106-4654, SEMICONDUCTOR DEVICES,UNITIZED

5961-01-106-4655 SEMICONDUCTOR DEVICES,UNITIZED

National Stock Number:
5961-01-106-4654

Federal Supply Class:
5961

National Item Identification Number:
011064654

Description:
SEMICONDUCTOR DEVICES,UNITIZED

Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.

Manufacturer Information:

0N370199-1	98230	NATIONAL SECURITY AGENCY
723089-44	05869	RAYTHEON COMPANY
SHQ564H	04713	FREESCALE SEMICONDUCTOR, INC.

Techincal Specification:

COMPONENT NAME AND QUANTITY	4 TRANSISTOR4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC	500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR500.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED	BURN IN AND BURN IN AND HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE
OVERALL HEIGHT	0.200 INCHES MAXIMUM0.200 INCHES MAXIMUM
OVERALL LENGTH	0.785 INCHES MAXIMUM0.785 INCHES MAXIMUM
OVERALL WIDTH	0.375 INCHES MAXIMUM0.375 INCHES MAXIMUM
MATERIAL	PLASTIC ENCLOSURE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	200.0 CELSIUS JUNCTION200.0 CELSIUS JUNCTION
MOUNTING METHOD	PRESS FITPRESS FIT
SPECIAL FEATURES	ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPNALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: NPN
POWER RATING PER CHARACTERISTIC	1900.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR1900.0 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIAL	SILICON ALL TRANSISTORSILICON ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS ALL TRANSISTOR5.0 MAXIMUM EMITTER TO BASE VOLTAGE, INSTANTANEOUS ALL TRANSISTOR
TERMINAL TYPE AND QUANTITY	12 RIBBON12 RIBBON

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