| COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE2 SEMICONDUCTOR DEVICE DIODE |
| CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE100.00 MILLIAMPERES NOMINAL AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE ALL SEMICONDUCTOR DEVICE DIODE |
| FEATURES PROVIDED | HERMETICALLY SEALED CASEHERMETICALLY SEALED CASE |
| OVERALL HEIGHT | 0.200 INCHES NOMINAL0.200 INCHES NOMINAL |
| OVERALL LENGTH | 0.468 INCHES NOMINAL0.468 INCHES NOMINAL |
| OVERALL WIDTH | 0.312 INCHES NOMINAL0.312 INCHES NOMINAL |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 62.0 CELSIUS AMBIENT AIR62.0 CELSIUS AMBIENT AIR |
| MOUNTING METHOD | TERMINALTERMINAL |
| POWER RATING PER CHARACTERISTIC | 250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE250.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODESILICON ALL SEMICONDUCTOR DEVICE DIODE |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED ALL SEMICONDUCTOR DEVICE DIODE50.0 MAXIMUM WORKING PEAK REVERSE VOLTAGE, MAXIMUM PEAK TOTAL VALUE, GATE TERMINAL OPEN-CIRCUITED ALL SEMICONDUCTOR DEVICE DIODE |
| TERMINAL LENGTH | 0.900 INCHES MINIMUM0.900 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD4 UNINSULATED WIRE LEAD |