| COMPONENT NAME AND QUANTITY | 12 SEMICONDUCTOR DEVICE DIODE |
| CURRENT RATING PER CHARACTERISTIC | 10.00 MICROAMPERES MAXIMUM REVERSE CURRENT, INSTANTANEOUS SINGLE SEMICONDUCTOR DEVICE DIODE |
| FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE AND GOLD PLATED LEADS AND HERMETICALLY SEALED CASE |
| FUNCTION FOR WHICH DESIGNED | ZENER DIODE |
| OVERALL HEIGHT | 0.230 INCHES MINIMUM |
| OVERALL LENGTH | 0.770 INCHES MINIMUM AND 0.830 INCHES MAXIMUM |
| OVERALL WIDTH | 0.290 INCHES MINIMUM AND 0.325 INCHES MAXIMUM |
| MATERIAL | CERAMIC ENCLOSURE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 CELSIUS JUNCTION |
| MOUNTING METHOD | TERMINAL |
| POWER RATING PER CHARACTERISTIC | 1.0 WATTS NOMINAL OFF-STATE POWER DISSIPATION SINGLE SEMICONDUCTOR DEVICE DIODE |
| PRECIOUS MATERIAL AND LOCATION | TERMINALS GOLD |
| PRECIOUS MATERIAL | GOLD |
| SEMICONDUCTOR MATERIAL | SILICON SINGLE SEMICONDUCTOR DEVICE DIODE |
| SPECIAL FEATURES | SINGLE SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 14.5 NOMINAL REVERSE VOLTAGE, INSTANTANEOUS SINGLE SEMICONDUCTOR DEVICE DIODE |
| TERMINAL LENGTH | 0.125 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 12 PIN |