5961-01-372-8127, SEMICONDUCTOR DEVICES,UNITIZED

5961-01-372-8126 SEMICONDUCTOR DEVICES,UNITIZED

1560-01-372-8128 PLATE,STRUCTURAL,AIRCRAFT

National Stock Number:
5961-01-372-8127

Federal Supply Class:
5961

National Item Identification Number:
013728127

Description:
SEMICONDUCTOR DEVICES,UNITIZED

Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.

Manufacturer Information:

77A112799P001	03538	LOCKHEED MARTIN CORPORATION
77A112799P1	03538	LOCKHEED MARTIN CORPORATION

Techincal Specification:

COMPONENT NAME AND QUANTITY	4 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC	3.00 AMPERES NOMINAL COLLECTOR CURRENT, DC ALL TRANSISTOR
FEATURES PROVIDED	ELECTROSTATIC SENSITIVE
OVERALL LENGTH	0.375 INCHES NOMINAL
OVERALL WIDTH	0.340 INCHES NOMINAL
MATERIAL	PLASTIC ENCLOSURE
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT	125.0 CELSIUS JUNCTION
MOUNTING METHOD	TERMINAL
POWER RATING PER CHARACTERISTIC	5.0 WATTS NOMINAL TOTAL POWER DISSIPATION FOURTH TRANSISTOR
POWER RATING PER CHARACTERISTIC	5.0 WATTS NOMINAL TOTAL POWER DISSIPATION FIRST TRANSISTOR
POWER RATING PER CHARACTERISTIC	10.0 WATTS NOMINAL TOTAL POWER DISSIPATION SECOND TRANSISTOR
POWER RATING PER CHARACTERISTIC	10.0 WATTS NOMINAL TOTAL POWER DISSIPATION THIRD TRANSISTOR
SEMICONDUCTOR MATERIAL	SILICON ALL TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	-60.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -4.0 NOMINAL BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND -60.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN SECOND TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	-60.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND -4.0 NOMINAL BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND -60.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN THIRD TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	80.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 NOMINAL BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 50.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN FIRST TRANSISTOR
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC	80.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 5.0 NOMINAL BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN AND 50.0 NOMINAL BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN FOURTH TRANSISTOR
TERMINAL TYPE AND QUANTITY	9 PIN

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