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National Stock Number:
5961-01-412-9224
Federal Supply Class:
5961
National Item Identification Number:
014129224
Description:
SEMICONDUCTOR DEVICES,UNITIZED
Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.
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Manufacturer Information:
| 7548674P1 | 99971 | LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS | | 94-0627 | 59993 | INTERNATIONAL RECTIFIER CORPORATION USE CAGE CODE 81483 FOR CATALOGING | | G200880-1 | 3B150 | RAYTHEON COMPANY | | G200880-1 | 49956 | RAYTHEON COMPANY | | IRFG6110 | 59993 | INTERNATIONAL RECTIFIER CORPORATION USE CAGE CODE 81483 FOR CATALOGING | | 94-0627 | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP | | JANTX2N7336 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | | MIL-PRF-19500/598 | 81349 | MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M | | IRFG6110 | 81483 | INFINEON TECHNOLOGIES AMERICAS CORP |
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Techincal Specification:
| COMPONENT NAME AND QUANTITY | 4 TRANSISTOR | | INCLOSURE MATERIAL | CERAMIC | | POWER RATING PER CHARACTERISTIC | 1.4 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR | | PROPRIETARY CHARACTERISTICS | NPAC | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 DEG CELSIUS AMBIENT AIR | | MOUNTING METHOD | TERMINAL | | OVERALL HEIGHT | 0.105 INCHES MINIMUM AND 0.175 INCHES MAXIMUM | | OVERALL LENGTH | 0.690 INCHES MINIMUM AND 0.770 INCHES MAXIMUM | | OVERALL WIDTH | 0.290 INCHES MINIMUM AND 0.325 INCHES MAXIMUM | | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR | | SPECIFICATION/STANDARD DATA | 81349-MIL-PRF-19500/598 GOVERNMENT SPECIFICATION | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MINIMUM BREAKDOWN VOLTAGE, DRAIN-TO-SOURCE, WITH ALL OTHER TERMINALS SHORT-CIRCUITED TO SOURCE ALL TRANSISTOR AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE ALL TRANSISTOR | | TERMINAL TYPE AND QUANTITY | 14 PRINTED CIRCUIT | | TEST DATA DOCUMENT | 81349-MIL-PRF-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
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