| OVERALL LENGTH | 0.560 INCHES MAXIMUM |
| OVERALL WIDTH | 0.370 INCHES MAXIMUM |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR |
| POWER RATING PER CHARACTERISTIC | 2.5 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET ALL SEMICONDUCTOR DEVICE DIODE |
| SPECIAL FEATURES | VARISTOR DIODE ASSY |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 2.15 MAXIMUM FORWARD VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE |
| TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| TEST DATA DOCUMENT | 49956-G204968 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| CAPACITANCE RATING IN PICOFARADS | 95.0 MAXIMUM ALL SEMICONDUCTOR |
| COMPONENT NAME AND QUANTITY | 4 SEMICONDUCTOR DEVICE DIODE |
| CURRENT RATING PER CHARACTERISTIC | 4.00 AMPERES FORWARD CURRENT, AVERAGE BLANK ALL SEMICONDUCTOR DEVICE DIODE AND 90.00 AMPERES PEAK FORWARD SURGE CURRENT NANOAMPERES ALL SEMICONDUCTOR DEVICE DIODE AND 300.00 AMPERES SOURCE CUTOFF CURRENT UNIVERSAL ALL SEMICONDUCTOR DEVICE DIODE |
| FUNCTION FOR WHICH DESIGNED | BIDIRECTIONAL |
| INCLOSURE MATERIAL | METAL OR GLASS |
| OVERALL HEIGHT | 0.255 INCHES MAXIMUM |