| COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
| CURRENT RATING PER CHARACTERISTIC | 35.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR |
| OVERALL HEIGHT | 1.100 MILLIMETERS MAXIMUM |
| OVERALL LENGTH | 2.800 MILLIMETERS MAXIMUM |
| OVERALL WIDTH | 2.800 MILLIMETERS MAXIMUM |
| MATERIAL | PLASTIC ENCLOSURE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | -55.0 CELSIUS CASE AND 125.0 CELSIUS CASE |
| MOUNTING FACILITY QUANTITY | 4 |
| MOUNTING METHOD | TERMINAL |
| POWER RATING PER CHARACTERISTIC | 150.0 MILLIWATTS MAXIMUM OFF-STATE POWER DISSIPATION ALL SEMICONDUCTOR |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR |
| SPECIAL FEATURES | WIDEBANDOPERATION |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 5.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 0.5 MAXIMUM FORWARD VOLTAGE, DC ALL SEMICONDUCTOR |
| TERMINAL LENGTH | 2.900 MILLIMETERS MAXIMUM |
| TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |