| CAPACITANCE RATING IN PICOFARADS | 0.05 MINIMUM AND 0.06 MAXIMUM LOCATION NOT OTHERWISE SPECIFIED |
| COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
| CURRENT RATING PER CHARACTERISTIC | 550.00 MILLIAMPERES MINIMUM FORWARD CURRENT, DC AND 700.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC LOCATION NOT OTHERWISE SPECIFIED |
| OVERALL WIDTH | 0.002 MILLIMETERS MAXIMUM LOCATION NOT OTHERWISE SPECIFIED |
| MATERIAL | GLASS ENCLOSURE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS JUNCTION LOCATION NOT OTHERWISE SPECIFIED |
| MOUNTING FACILITY QUANTITY | 1 LOCATION NOT OTHERWISE SPECIFIED |
| MOUNTING METHOD | PRESS FIT LOCATION NOT OTHERWISE SPECIFIED |
| OVERALL HEIGHT | 0.010 MILLIMETERS MAXIMUM LOCATION NOT OTHERWISE SPECIFIED |
| OVERALL LENGTH | 0.036 MILLIMETERS MAXIMUM LOCATION NOT OTHERWISE SPECIFIED |
| POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM FORWARD POWER DISSIPATION, AVERAGE LOCATION NOT OTHERWISE SPECIFIED |
| SEMICONDUCTOR MATERIAL | SILICON LOCATION NOT OTHERWISE SPECIFIED |
| TERMINAL LENGTH | 0.013 MILLIMETERS MAXIMUM LOCATION NOT OTHERWISE SPECIFIED |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 9.0 MINIMUM BREAKDOWN VOLTAGE, DC LOCATION NOT OTHERWISE SPECIFIED |