| COMPONENT NAME AND QUANTITY | 15 SEMICONDUCTOR DEVICE DIODE |
| CURRENT RATING PER CHARACTERISTIC | 10.00 AMPERES MAXIMUM PEAK FORWARD SURGE CURRENT AND 2.00 MICROAMPERES MAXIMUM DRAIN CURRENT ALL SEMICONDUCTOR DEVICE DIODE |
| FUNCTION FOR WHICH DESIGNED | TRANSIENT SUPPRESSOR |
| OVERALL HEIGHT | 0.192 INCHES MAXIMUM |
| OVERALL LENGTH | 0.895 INCHES MINIMUM AND 0.925 INCHES MAXIMUM |
| OVERALL WIDTH | 0.450 INCHES MINIMUM AND 0.480 INCHES MAXIMUM |
| MATERIAL | CERAMIC ENCLOSURE |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | -55.0 CELSIUS AMBIENT AIR AND 150.0 CELSIUS AMBIENT AIR |
| MOUNTING METHOD | TERMINAL |
| SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
| SPECIAL FEATURES | THE H1 IN THE P/N REPRESENTS 100% JANTX LEVEL SCREENING |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 12.0 MAXIMUM REVERSE SUPRESSION VOLTAGE AND 13.3 MINIMUM BREAKDOWN VOLTAGE, DC ALL SEMICONDUCTOR |
| TERMINAL LENGTH | 0.165 INCHES MINIMUM |
| TERMINAL TYPE AND QUANTITY | 16 PIN |