| BODY HEIGHT | 0.200 INCHES MAXIMUM |
| BODY LENGTH | 1.200 INCHES MINIMUM AND 1.300 INCHES MAXIMUM |
| BODY WIDTH | 0.500 INCHES MINIMUM AND 0.600 INCHES MAXIMUM |
| FEATURES PROVIDED | MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND 3-STATE OUTPUT |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC AND GLASS |
| INPUT CIRCUIT PATTERN | 10 INPUT |
| OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MAXIMUM POWER DISSIPATION RATING | 800.0 MILLIWATTS |
| MEMORY DEVICE TYPE | ROM |
| OPERATING TEMP RANGE | -25.0 TO 85.0 CELSIUS |
| STORAGE TEMP RANGE | -65.0 TO 125.0 CELSIUS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TIME RATING PER CHACTERISTIC | 2000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 2000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 15.0 VOLTS MAXIMUM POWER SOURCE |