| BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM |
| FEATURES PROVIDED | PROGRAMMABLE AND HIGH SPEED AND 3-STATE OUTPUT AND HERMETICALLY SEALED AND BURN IN AND MONOLITHIC |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -1.0 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| TIME RATING PER CHACTERISTIC | 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| BODY WIDTH | 0.260 INCHES MINIMUM AND 0.280 INCHES MAXIMUM |
| OUTPUT LOGIC FORM | DIODE-TRANSISTOR LOGIC |
| TERMINAL SURFACE TREATMENT | SOLDER |
| BODY LENGTH | 0.750 INCHES MINIMUM AND 0.770 INCHES MAXIMUM |
| OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| INPUT CIRCUIT PATTERN | 8 INPUT |
| MEMORY DEVICE TYPE | ROM |
| INCLOSURE MATERIAL | CERAMIC AND GLASS |