| BODY HEIGHT | 0.125 INCHES MAXIMUM |
| BODY LENGTH | 1.065 INCHES MINIMUM AND 1.105 INCHES MAXIMUM |
| BODY WIDTH | 0.380 INCHES MINIMUM AND 0.393 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND W/BUFFERED OUTPUT AND W/ENABLE AND 3-STATE OUTPUT |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC AND GLASS |
| INPUT CIRCUIT PATTERN | 10 INPUT |
| OUTPUT LOGIC FORM | P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY CAPACITY | UNKNOWN |
| MEMORY DEVICE TYPE | ROM |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 0.3 VOLTS MAXIMUM POWER SOURCE |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 22 PRINTED CIRCUIT |
| TEST DATA DOCUMENT | 13499-351-8530 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| TIME RATING PER CHACTERISTIC | 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |