| BODY HEIGHT | 0.180 INCHES MAXIMUM |
| BODY LENGTH | 0.810 INCHES MAXIMUM |
| BODY WIDTH | 0.295 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED AND DYNAMIC AND W/ENABLE AND W/STROBE AND 3-STATE OUTPUT |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| INPUT CIRCUIT PATTERN | 11 INPUT |
| OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| MEMORY CAPACITY | UNKNOWN |
| MEMORY DEVICE TYPE | RAM |
| OPERATING TEMP RANGE | +0.0 TO 70.0 CELSIUS |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 20.0 VOLTS MAXIMUM POWER SOURCE |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| TIME RATING PER CHACTERISTIC | 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |