| BIT QUANTITY | 16384 |
| BODY HEIGHT | 4.5 MILLIMETERS NOMINAL |
| BODY LENGTH | 19.0 MILLIMETERS MINIMUM AND 20.3 MILLIMETERS MAXIMUM |
| BODY WIDTH | 6.1 MILLIMETERS MINIMUM AND 6.6 MILLIMETERS MAXIMUM |
| FEATURES PROVIDED | 3-STATE OUTPUT AND W/ENABLE AND DYNAMIC |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | PLASTIC |
| INPUT CIRCUIT PATTERN | 11 INPUT |
| OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MAXIMUM POWER DISSIPATION RATING | 140.0 MILLIWATTS |
| MEMORY DEVICE TYPE | RAM |
| OPERATING TEMP RANGE | +0.0 TO 70.0 CELSIUS |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| WORD QUANTITY | 16384 |
| STORAGE TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| TIME RATING PER CHACTERISTIC | 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |