| FEATURES PROVIDED | PROGRAMMED AND TESTED TO MIL-STD-883 |
| HYBRID TECHNOLOGY TYPE | MONOLITHIC |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY DEVICE TYPE | EPROM |
| OPERATING TEMP RANGE | -10.0 TO 80.0 CELSIUS |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT DIGITAL 131072-BIT READ ONLY MEMORY (16384X8) |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.6 VOLTS MINIMUM ABSOLUTE INPUT AND 6.0 VOLTS MAXIMUM ABSOLUTE INPUT AND 6.0 VOLTS MAXIMUM ABSOLUTE OUTPUT |
| STORAGE TEMP RANGE | -65.0 TO 125.0 CELSIUS |
| TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| TEST DATA DOCUMENT | 05869-726038-2 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| TIME RATING PER CHACTERISTIC | 250.00 NANOSECONDS NOMINAL ACCESS |