| BIT QUANTITY | 4096 |
| CASE OUTLINE SOURCE AND DESIGNATOR | D-6 MIL-M-38510 |
| FEATURES PROVIDED | MONOLITHIC AND HERMETICALLY SEALED AND BURN IN |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | SILICON |
| MAXIMUM POWER DISSIPATION RATING | 1.0 MILLIWATTS |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUITS, DIGITAL,CMOS 4096 BIT STATIC RANDOM ACCESS MEMORY (RAM) MONOLITHIC SILICON |
| SPECIAL FEATURES | MICROCIRCUIT,MEMORY |
| SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/289 GOVERNMENT SPECIFICATION |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| WORD QUANTITY | 1024 |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |
| TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| TIME RATING PER CHACTERISTIC | 35.00 NANOSECONDS MAXIMUM ACCESS |