| CASE OUTLINE SOURCE AND DESIGNATOR | D-10 MIL-M-38510 |
| CRITICALITY CODE JUSTIFICATION | AFJQ AND CBBL |
| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, DIGITAL-PROGRAMMABLE READ ONLY, MEMORY, UV ERASABLE |
| PROPRIETARY CHARACTERISTICS | PACS |
| MEMORY CAPACITY | 8192 X 8-BIT |
| MEMORY DEVICE TYPE | EPROM |
| OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT |
| STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| TIME RATING PER CHACTERISTIC | 250.00 NANOSECONDS AF OUTPUT MEGAWATTS |